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| schottky diode features z low-power rectification z for switching power supply z ultra low v f .(v f =0.45v typ. at 0.7a) z i f =0.7a guaranteed despite the size. marking: 3b maximum ratings @t a =25 parameter symbol limits unit non-repetitive peak reverse voltage v rm 25 v dc blocking voltage v r 20 v average rectified output current i o 700 ma power dissipation p d 150 mw junction temperature t j 125 storage temperature range t stg -40 to+125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 200 a 20 v reverse voltage leakage current i r v r =20v 200 a forward voltage v f i f =700ma 0.49 v sot-323 1. anode 2. n,c 3. cathode + - RB461F 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics RB461F 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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